FinFET channel is
usually desired to be fully depleted however to have better control of leakage
current under the fins the channel is usually lightly doped 10. The doping concentration
of Source/Drain region requires high dopant and hence increases the series
resistance of the device 18. This damages the fin’s geometry of the device.
To overcome this problem in-situ epitaxial growth is done at the source and drain
area with or without removing the fin of the structure 18.